It is a high hardness compound with a melting point of 2054 ° C and a boiling point of 2980 ° C. Ionized ionic crystals at high temperatures are commonly used in the manufacture of refractory materials.

GaN is a third-generation semiconductor material with a large forbidden band width, and its superiority in characteristics compared with the first-generation Si and second-generation GaAs.

The silicon carbonitride-coated molybdenum disulfide sheet exhibits a stable cycle of lithium ions, whether the battery electrode is a conventional copper foil method or a self-supporting flexible paper in a bendable battery," Singer said after the reacti

Crystalline tungsten oxide is a kind of battery material with large capacity storage energy, but there is not much bright spot for energy storage speed.

GaN is a transparent crystalline material that has been used in LED production for nearly 30 years, and its high frequency performance allows the production of violet laser diodes.

Ta4HfC5, which has a melting point of 4215 ℃. is made of hafnium carbide and tantalum carbide (melting point of nearly 4000 ℃), which have a higher melting point than tungsten.

Tungsten trioxide is a pale yellow triclinic powder crystal. When the temperature is higher than 740 ° C, it turns into an orange tetragonal crystal, and after cooling, it returns to its original state.

Hexagonal boron nitride is known as white graphite and has a layered structure similar to graphite. It has good lubricity, electrical insulating thermal conductivity and chemical resistance, and has neutron absorption capacity.

Molybdenum sulfide has a new electronic state, the energy quantum state, which can be regarded as the third internal degree of freedom of electrons after charge and spin.

Boron is one of the big names in chemistry. So far, two people have won the Nobel Prize in chemistry for their work on boron.But such a big bowl of people, in life is so approachable.