What is gallium nitride? Gallium nitride, chemical formula GaN, is a compound of nitrogen and gallium, a semiconductor with a direct energy gap. It has been used in LEDs since 1990. This compound is similar to wurtzite in structure and has high hardness. GaN has a very wide energy gap of 3.4 electron volts, which can be used in high-power and high-speed optoelectronic devices. For example, GaN can be used in purple laser diodes and generate purple lasers without using nonlinear semiconductor-pumped solid-state lasers.
Advantages and advantages of gallium nitride The lattice symmetry is relatively low (hexagonal wurtzite structure or tetragonal metastable sphalerite structure) and has strong piezoelectricity (caused by non-central symmetry) and ferroelectricity (spontaneous polarization along the hexagonal c-axis): strong piezoelectric polarization (polarization electric field up to 2MV/cm) and spontaneous polarization (polarization electric field up to 3MV/cm) is generated near the heterojunction interface, resulting in extremely high density of interface charges, which strongly modulates the energy band structure of the heterojunction, The two-dimensional space limitation of 2-DEG is strengthened, thus increasing the surface density of 2-DEG (1013/cm2 in AlGaN/GaN heterostructure, which is an order of magnitude higher than that in AlGaAs/GaAs heterostructure), which is very significant for device work. In a word, the advantages of GaN make up for its disadvantages. Especially through the role of heterojunction, its effective transport performance is not inferior to that of GaAs, and the effect of making microwave power devices (microwave output power density) is often far superior to all existing semiconductor materials.
Main problems of gallium nitride Because GaN is a wide band gap semiconductor whose polarity is too large, it isn't easy to obtain better metal-semiconductor ohmic contact through high doping. This is a difficult problem in GaN device manufacturing. Therefore, the performance of the GaN device is often related to the manufacturing results of ohmic contact. Now a better solution is to use heterojunction. First, let the band gap gradually transition to smaller, and then use high doping to achieve an ohmic contact. But this process is more complex. In short, ohmic contact is a major problem to be solved in GaN device manufacturing.
Properties and stability of gallium nitride It will not decompose if used and stored according to specifications. Avoid contact with oxides, heat, and moisture/humidity. GaN begins to decompose at 1050 ℃: 2GaN (s)=2Ga (g)+N2 (g). X-ray diffraction has pointed out that GaN crystal belongs to the hexagonal crystal system of fibrous zincate lattice type. In nitrogen or helium, when the temperature is 1000 ℃, GaN will slowly volatilize, which proves that GaN is stable at a higher temperature. At 1130 ℃, its vapor pressure is lower than the value calculated from enthalpy and entropy due to the presence of polymer molecule (GaN) x. GaN is not decomposed by cold or hot water, dilute or concentrated hydrochloric acid, nitric acid, sulfuric acid, or cold 40% HF. It is also stable in cold concentrated alkali but soluble in alkali when heated.
Price of gallium nitride Gallium nitride particle size and purity will affect the product's price, and the purchase volume can also affect the cost of gallium nitride. A large amount of large amount will be lower. The price of gallium nitride can be found on our company's official website.
Gallium nitride supplier Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) Luoyang City, Henan Province, China, is a reliable and high-quality global chemical material supplier and manufacturer. It has more than 12 years of experience providing ultra-high quality chemicals and nanotechnology materials, including gallium nitride, nitride powder, graphite powder, sulfide powder, and 3D printing powder. If you are looking for high-quality and cost-effective gallium nitride, you are welcome to contact us or inquire at any time.
