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Nitride Powder

Gallium Nitride GaN powder CAS 25617-97-4

Item No.: Tr-GaN
Gallium Nitride (GaN) is a hard, mechanically stable semiconductor compound with high heat capacity and thermal conductivity. It has a band gap of 3.4 eV and is crack resistant in its pure form.
Purity: 99.99%
Gallium Nitride Properties
What is Gallium nitride?
Gallium nitride, chemical formula GaN, is a compound semiconductor material composed of the elements nitrogen and gallium. This material has a wide forbidden bandwidth (approximately 2.4 eV), which gives it a high breakdown electric field, high thermal conductivity, and good optical properties. In addition, GaN has a high melting point and hardness, making it an ideal material for high-temperature and power applications. Gallium Nitride (GaN) is a broadband semiconductor material with excellent optical, electrical, and physical properties, resulting in various applications in several fields.

Properties of Gallium Nitride:
CAS No. CAS 25617-97-4
Purity ≥99.99%
CAS Number 25617-97-4
Appearance Yellow powder
X-Ray Diffraction Conforms to Structure
Trance Metal Analysis 200 ppm

Its low sensitivity to ionizing radiation (with another group of III-nitrides) makes it a suitable material for satellite solar cell arrays. Military and spatial applications may also benefit because the equipment exhibits stability in the radiation environment.
Because the Gallium nitride transistor can operate at a higher temperature and operate at a high voltage than the arsenide (GaAs) transistor, they produce an ideal power amplifier at microwave frequencies. In addition, GAN also provides a hoped feature for THz devices. Due to high power density and voltage breakdown restrictions, GaN is also revealed as a hopeful candidate for 5G cellular base stations. 
The research and application of GaN materials are the frontier and hotspots of global semiconductor research. It is a new semiconductor material developing microelectronic devices, optical electronics, and semiconductor materials such as SiC, diamonds, which are known as the first generation of GE, Si A third-generation semiconductor material after semiconductor material, second-generation GaAs, InP compound semiconductor material. It has a wide direct bandgap, strong atomic bond, high thermal conductivity, high chemical stability (almost no sour corrosion), etc., in light electrons, high-temperature high power devices and high-Frequency microwave device application has broad prospects.

Feel free to send an inquiry to get the latest gallium nitride price if you would like to buy Gallium Nitride powder in bulk.

Product Performance of Gallium Nitride powder:
GaN powder has a wide direct bandgap, strong atomic bonds, high thermal conductivity, good chemical stability (almost no acid corrosion) and other properties and strong anti-radiation ability in optoelectronics, high temperature and high power devices and high-frequency microwave device applications have a broad prospect.
Properties of Gallium Nitride
Gallium nitride is a hard solid with a hexagonal crystal structure. Its color varies with the crystal structure and is usually gray or blue. The crystal structure of gallium nitride consists of alternating Ga and N atoms, giving it high hardness and thermal conductivity. Gallium Nitride also has a high refractive index, making it widely used in the optical field.

Gallium nitride is chemically stable and insoluble in water and dilute acids but can react with strong acids and bases. Due to its wide bandwidth characteristics, Gallium Nitride is stable in high-temperature and radiation environments. In addition, gallium nitride can also form various compounds with other Ⅲ-V elements, such as AlGaN, InGaN, etc.; these compounds also have wide-band characteristics, suitable for high-temperature and short-wavelength optoelectronic devices.

Technical Parameter of Gallium Nitride GaN powder:
Product Name MF Purity Particle Size Melting Point Density Color
gallium nitride GaN 99.99% -60 mesh 1700℃ 6.1g/mL,25/4℃ light yellow

Chemical Composition of Gallium Nitride GaN powder:
GaN Cu Ni Zn Al Na Cr In Ca
99.99% 0.0005% 0.0003% 0.0005% 0.001% 0.0005% 0.0003% 0.0005% 0.005%

How is Gallium Nitride GaN powder produced?
Gallium nitride is a Group III-V Gan semiconductor and has a very high chemical resistance to corrosive environments. There is a firm bond between Ga and nitrogen, which is the cause of the corrosion resistance of the compound. Ballium nitride is a direct bandgap semiconductor (bandgap = 3.4 having a fibrous mineral structure EV) and is a material for producing a corrosive ambient light-emitting device. Gallium nitride is prepared by reacting Ga2O 3 with NH3 at a high temperature of about 1000 ° C.
Ga 2 O 3 + 2 NH 3 → 2 GaN + 3H 2 O
An organometallic compound containing Ga and a nitrogen atom can also be deposited by the chemical gas phase. X-ray diffraction and conductivity measurements indicate that corrosive acids and alkaline environments have no effect on the GaN phase.

Applications of Gallium Nitride 

Gallium Nitride has a wide range of applications in several fields due to its broadband characteristics, high breakdown electric field, high thermal conductivity, and good optical properties.

Gallium Nitride (GaN) is a broadband semiconductor material with many applications in many fields due to its unique physical and chemical properties, such as high breakdown electric field, high thermal conductivity, and good optical properties. The following are the main application areas of GaN.

LED Lighting:

Gallium nitride is one of the key materials in the field of LED lighting.LED lighting has the advantages of high brightness, low energy consumption, long life, etc., and LEDs with gallium nitride substrate have more advantages in performance and reliability. Gallium nitride LEDs are widely used in indoor lighting, outdoor lighting, display backlighting, and other fields.

High-temperature electronic devices:

Because gallium nitride has a high melting point and hardness, it becomes an ideal material for high-temperature electronic devices. High-temperature electronic devices can work properly in high-temperature and harsh environments and are suitable for aerospace, automotive, industrial, and other fields. Gallium nitride's high-temperature electronic devices are characterized by high reliability, high durability, and low energy consumption, making them widely applicable in these fields.

Solar Cells:

Gallium nitride has high transmittance and thermal conductivity, making it potentially useful in the field of solar cells. In solar cells, gallium nitride can be used as a window layer material to improve photoelectric conversion efficiency and reduce costs. In addition, gallium nitride can also be formed with other Ⅲ-V elements to form various compounds, such as AlGaN, InGaN, etc. These compounds also have wide-band characteristics, suitable for high-temperature solar cells.

Short wavelength optical devices:

As gallium nitride has wide bandwidth characteristics and good optical properties, it is widely used in short-wavelength optical devices. Gallium nitride can manufacture high-efficiency photoelectric converters and optical signal processing devices, such as short-wavelength lasers, optical amplifiers, etc. In addition, gallium nitride can also be formed with other Ⅲ-V elements to form various compounds, such as AlGaN, InGaN, etc.; these compounds also have wide bandwidth characteristics, suitable for short-wavelength optical devices.

Power electronic devices:

GaN's high breakdown electric field and high thermal conductivity make it an ideal material for power electronic devices. Power electronic devices are mainly used in fields such as power conversion and power control. GaN power electronic devices have high efficiency, low energy consumption, high reliability, and other characteristics, which make them have a wide range of application prospects in the field of power electronics.

Biomedical applications:

Gallium nitride also has some applications in the biomedical field. For example, GaN-based biosensors can detect biomolecules and cells for drug screening, disease diagnosis and treatment, and other fields. In addition, gallium nitride can be combined with other materials to create biocompatible implants and medical devices.

Inertial Confinement Fusion (ICF):

In the field of ICF, Gallium Nitride is used as a coating material for inertial confinement fusion reactors to increase the thermal conductivity and structural strength of the reactor while reducing costs.ICF is a high-energy density physics technology using laser or particle beam drive to generate high-energy-density matter and fusion energy.

Packing & Shipping of Gallium Nitride GaN powder :

We have many different kinds of packing, which depend on the gallium nitride GaN powder quantity.

Gallium nitride GaN powder packing: vacuum packing, 100g, 500g, or 1kg/bag, 25kg/barrel, or as you request.

Gallium nitride GaN powder shipping: could be shipped out by sea, by air, or by express as soon as possible once payment receipt.

Gallium nitride powder supplier

Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) is a trusted global chemical material supplier & manufacturer with over 12 years of experience in providing super high-quality chemicals and Nanomaterials, including boride powder, nitride powder, graphite powder, sulfide powder, 3D printing powder, etc.

If you are looking for high-quality gallium nitride powder, please feel free to contact us and send an inquiry. ([email protected])

Gallium Nitride Properties

Other Names gallium nitride powder, GaN, GaN powder, gallium mononitride
CAS No. 25617-97-4
Compound Formula GaN
Molecular Weight 83.73
Appearance Light Yellow Powder
Melting Point 1700 °C
Boiling Point N/A
Density 6.1 g/cm3
Solubility in H2O N/A
Exact Mass 82.9287
Monoisotopic Mass 82.9287

Aluminum Nitride Health & Safety Information

Signal Word Warning
Hazard Statements H317
Hazard Codes N/A
Risk Codes N/A
Safety Statements 22-24/25
RTECS Number LW9640000
Transport Information N/A
WGK Germany 3
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