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Advanced Ceramics

Reaction-bonded Silicon Carbide SiSiC Ceramic Product

Reaction-bonded silicon carbide (RB-SiC) offers near-net-shape forming, high thermal shock resistance, and superior wear resistance.
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Description

Overview of Reaction-bonded Silicon Carbide

Reaction-bonded silicon carbide, abbreviated as SiSiC, is an advanced engineering ceramic manufactured through a unique "reaction bonding" process. The final product primarily consists of silicon carbide (SiC) and a small amount of remaining free silicon (Si) phase.Its fundamental difference from process routes like pressureless sintering and hot pressing lies in the fact that a chemical reaction occurs during the sintering process, utilizing the newly formed phase from the reaction to densify the material.

Reaction-bonded silicon carbide
 

Features of Reaction-bonded Silicon Carbide
 

RB-SiC offers a compelling set of properties that bridge the gap between performance and manufacturability.
Near-Net-Shape Forming: Experiences extremely low sintering shrinkage (<1%), enabling the production of complex, dimensionally precise components with minimal post-processing.
Exceptional Thermal Properties: Possesses high thermal conductivity and outstanding thermal shock resistance, performing reliably under rapid temperature changes.
Superior Hardness & Wear Resistance: With a Mohs hardness of 13, it is an excellent material for abrasive and wear-intensive environments.
High Strength & Stiffness: Maintains high mechanical strength and rigidity at both room and elevated temperatures.
Good Corrosion Resistance: Highly resistant to most acids, alkalis, and salt solutions, though vulnerable to hydrofluoric acid and hot, concentrated caustics due to the free silicon content.
 
 
Reaction-bonded silicon carbide

 

Specification Table of Reaction-bonded Silicon Carbide

 
Property Unit Value
Silicon Carbide Content % 98.5 - 99%
Max. Continuous Use Temp (Air) °C 1380
Density g/cm³ ≥ 3.02
Porosity % ≤ 0.1
Flexural Strength MPa 250 (20°C)
  MPa 280 (1200°C)
Elastic Modulus GPa 330 (20°C)
Thermal Conductivity W/m·K 120 (20°C)
  W/m·K 45 (1200°C)
Coefficient of Thermal Expansion K⁻¹ x10⁻⁶ 4.5
Mohs Hardness - 13

Applications of Reaction-bonded Silicon Carbide

The unique combination of features makes RB-SiC indispensable across a wide range of demanding industries.
High-Temperature Kiln & Thermal Equipment: The largest application area. Used for rollers, beams, rails, setters, and saggers in furnaces for ceramics, lithium battery materials, and magnetic materials.
Wear & Seal Components: Ideal for mechanical seal rings, wear-resistant liners, and nozzles in mining, power, and pump industries.
Chemical Industry: Suitable for pumps and valve components that handle corrosive media with particulate matter.
Ballistic Armor: Used in lightweight composite armor due to its high hardness and specific stiffness.
Semiconductor Industry: Employed in high-purity fixtures, paddles, and boats for wafer processing.


Reaction-bonded silicon carbide

Company Profile
 

Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality chemicals and nanomaterials, including boride powder, nitride powder, graphite powder, ceramic products, 3D printing powder, etc.
 
The company has a professional technical department and Quality Supervision Department, a well-equipped laboratory, and equipped with advanced testing equipment and after-sales customer service center.
 
If you are looking for high-quality Ceramic Products please feel free to contact us or click on the needed products to send an inquiry.

 


Storage Condition

The Liquid Lithium Silicate should store in a dry and cool environment in a sealed place, not exposed to the air, to prevent oxidative agglomeration caused by moisture, affecting the dispersion performance and use effect;

Payment Methods

L/C, T/T, Western Union, Paypal, Credit Card etc.

Shipment

By sea, by air, by express as soon as possible once payment receipt.
 

FAQs of Reaction-bonded Silicon Carbide

1. What is the main difference between RB-SiC and Sintered Silicon Carbide (SSiC)?
Re: The key difference is the manufacturing process. RB-SiC is densified via a chemical reaction with molten silicon, resulting in minimal shrinkage and containing some free silicon. SSiC is sintered without a chemical reaction, is nearly 100% SiC, and generally offers higher room-temperature strength and better corrosion resistance but is less suitable for large, complex shapes.
2. Why is the maximum use temperature of RB-SiC limited to around 1380°C?
Re: This limitation is due to the residual free silicon (melting point 1414°C) within the microstructure. Prolonged exposure in air above 1380°C can cause the silicon to oxidize or soften, leading to a degradation of mechanical properties.
3. In which chemical environments is RB-SiC not suitable?
Re: RB-SiC is not recommended for use in hydrofluoric acid (HF) or hot, concentrated alkaline solutions, as the free silicon phase will react and corrode.
4. What does "Near-Net-Shape" mean, and what is the benefit?
Re: "Near-Net-Shape" means the final product is formed very close to its desired dimensions. For RB-SiC, the sintering shrinkage is less than 1%, so the final part closely matches the mold. This drastically reduces the need for and cost of extensive final machining.
5. Is RB-SiC a good electrical insulator?
Re: No, Silicon Carbide is a semiconductor. The presence of free silicon, which is metallic, further increases the electrical conductivity of RB-SiC compared to the pure SSiC variety. It is not typically used as an insulator.


 
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