Overview of Zinc Nitride
The chemical formula of zinc nitride Zn3N2, gray crystal, soluble in hydrochloric acid. It quickly decomposes into zinc hydroxide and ammonia in cold water. It is produced by reacting zinc powder in ammonia gas at 500-600°C or by heating and decomposing amino zinc.
Application of Zinc Nitride
1. Used to prepare zinc nitride film
Zinc nitride (Zn3N2) has a pyrite-resistant structure and has unique electrical and optical properties. Whether zinc oxide is an indirect band gap semiconductor or a direct band gap semiconductor, its energy band gap has always been the main controversy in the semiconductor field. The problems of industry and academia, the differences in preparation methods and growth conditions, have a great influence on the band gap. For example, in the prior art, methods such as magnetron sputtering, chemical vapor deposition, electrostatic electrolysis, and molecular beam epitaxy can be used to prepare zinc nitride films.
However, the stability of zinc nitride films prepared by most methods is poor, and the optical and electrical properties of zinc oxide films prepared by the same method are also very different. There is an urgent need to obtain a simple, easy and reproducible preparation method with high crystalline quality. Provided here is a method of preparing a zinc nitride film. The preparation method adopts the atomic layer deposition method to prepare the zinc nitride film, and can precisely control the band gap of the zinc nitride film. The prepared membrane has a uniform and complete structure and excellent performance.
Atomic layer deposition (ALD) offers significant advantages over conventional deposition techniques for zinc nitride film preparation. The self-limiting surface reactions in ALD enable atomic-level thickness control, exceptional uniformity over large areas, and excellent conformality on complex three-dimensional structures. These characteristics are particularly valuable for advanced semiconductor devices and optoelectronic components where precise thickness control is critical for device performance. The ALD process also allows for lower deposition temperatures compared to other methods, which is beneficial for temperature-sensitive substrates and reduces thermal damage to underlying device layers.
The technical solutions adopted are:
A method for preparing a zinc nitride film includes the following steps:
(1) Place the substrate in the reaction chamber of the atomic layer deposition equipment;
(2) Bring the zinc-containing precursor source into the reaction chamber of the atomic layer deposition equipment, so that the zinc atoms in the zinc-containing precursor source are adsorbed on the surface of the substrate.
(3) Let the nitrogen-containing precursor source enter the reaction chamber of the atomic layer deposition equipment, and then ionize the nitrogen-containing precursor source through plasma. After ionization, the nitrogen atoms in the nitrogen-containing precursor source are partially deposited to form a nitrogen-zinc covalent bond with the zinc atoms on the surface of the substrate; or, the nitrogen-containing precursor source is ionized by plasma, and then the ionized precursor source is ionized. The nitrogen precursor is ionized. The source is sent to the atomic layer deposition equipment for reaction. In the cavity, after ionization, the nitrogen atoms in the nitrogen-containing precursor source are partially deposited. Form a nitrogen-zinc covalent bond with the zinc atom on the surface of the substrate;
(4) Repeat steps (2) and (3) to grow the zinc nitride film layer by layer.
The method is simple and easy to implement, can obtain high-quality crystals, and is a repeatable preparation method. The nitrogen source is introduced into the atomic layer deposition system through the plasma, and then the chamber temperature, vacuum degree, cycle period, plasma conditions and other conditions are precisely adjusted. Adjust the band gap of the prepared zinc nitride film. According to different electrical and optical application requirements, the present invention can obtain various high-quality zinc nitride films with adjustable band gaps.
2. Used to prepare a touch screen cover and touch screen cover film
With the advancement of technology and the development of smart devices, there is an increasing demand for touch screens as the main window for human-computer interaction. This solution can overcome the problem of low coating yield, high production cost, and low production efficiency when using black ink screen printing to prepare the light-shielding layer in the BM area of the touch screen cover in the prior art. When the resulting product is used in conjunction with a liquid crystal display, It is easy to produce bubbles and cannot achieve the defect of a perfect fit. Provide a touch screen cover and touch screen cover film made of zinc nitride.
The new type of touch screen cover film uses zinc nitride film as the functional layer of the black film, which has low surface reflectivity and low production cost; high surface hardness, strong scratch resistance and wear resistance; high surface energy, which can be effective The laminated liquid crystal display; the thickness is about 60 ~ 200nm, which can eliminate the step effect. The new type provides a touch screen cover film, which includes a zinc nitride (Zn3N2) film and a silicon nitride (Si3N4) film; wherein the thickness of the zinc nitride film is 10-50nm. Wherein, if the thickness of the zinc nitride film is more than 50 nm, the adhesion of the film will decrease; if the thickness of the zinc nitride film is less than 10 nm, it will transmit light and cannot achieve the effect of light-tightness. The zinc nitride film has strong absorption of visible light, has a black appearance, and is a functional layer of a black film. The touch screen cover film embodiment includes a zinc nitride (Zn3N2) film, a silicon nitride (Si3N4) film and a protective film in sequence; wherein the thickness of the zinc nitride film is 10nm; the thickness of the silicon nitride film is 50nm, the protective film is a conventional plastic protective film in the field. The touch screen cover of this embodiment includes a glass substrate and the aforementioned touch screen cover film, and the zinc nitride film of the touch screen cover film is connected to the glass substrate.
Other Emerging Applications
Beyond the applications described above, zinc nitride is being explored in several other emerging fields:
Solar Cells and Photovoltaics: The direct bandgap and high absorption coefficient of Zn₃N₂ make it a promising absorber material for thin-film solar cells. Its tunable bandgap (1.0–1.5 eV) is well-matched to the solar spectrum, enabling efficient light absorption and conversion. Research has shown that zinc nitride-based solar cells can achieve reasonable conversion efficiencies, and ongoing work focuses on improving device performance through interface engineering and doping optimization.
Photocatalysis: Zinc nitride exhibits photocatalytic activity under visible light irradiation due to its narrow bandgap, making it useful for water splitting and organic pollutant degradation applications. The material's semiconductor properties enable the generation of electron-hole pairs upon light absorption, which can drive chemical reactions such as hydrogen production or pollutant breakdown. This application is still in the research phase but shows promise for sustainable energy and environmental remediation technologies.
Biosensors: The biocompatibility and electrical properties of zinc nitride make it a candidate material for biosensor applications. Its sensitivity to environmental changes and ability to be functionalized with biological molecules enable its use in detecting specific biomarkers for medical diagnostics and environmental monitoring.
Thermoelectric Devices: Zinc nitride has been studied for thermoelectric applications due to its low thermal conductivity and high electrical conductivity. The combination of these properties results in a reasonable thermoelectric figure of merit, making it potentially useful for waste heat recovery and thermal sensing applications.
Zn₃N₂ Applications
Safety and Handling Considerations
Zinc nitride powder is chemically reactive and requires appropriate handling precautions.
Reactivity and Hazards: The material reacts with water and moisture to release ammonia gas, which can cause respiratory irritation. It also decomposes in acidic environments, producing toxic fumes. Avoid contact with water, acids, and oxidizing agents.
Protective Measures: When handling Zn₃N₂ powder, use in a well-ventilated area or fume hood, and wear appropriate personal protective equipment including dust masks, safety goggles, and gloves.
Fire and Storage: In case of fire, use dry powder or carbon dioxide extinguishers; water should be avoided as it may cause decomposition. Store in a cool, dry place in tightly sealed containers, away from moisture and incompatible substances.
Disposal: Disposal should be carried out in accordance with local environmental regulations. Due to its reactivity, professional waste management services should be consulted.
Quality Control and Characterization
The quality of zinc nitride powder and thin films depends on rigorous characterization and quality control measures.
Structural Characterization: X-ray diffraction (XRD) is used for phase identification and crystallinity assessment. Scanning electron microscopy (SEM) is employed for morphology and particle size analysis. Energy-dispersive X-ray spectroscopy (EDS) provides elemental composition verification.
Optical and Electrical Characterization: Optical properties are evaluated using UV-Vis-NIR spectroscopy to determine bandgap and absorption characteristics. Electrical properties are measured through Hall effect and four-point probe methods.
Thin-Film Quality: For thin-film applications, film thickness and uniformity are critical quality parameters, assessed through profilometry or ellipsometry. Maintaining consistent particle size distribution, purity, and phase purity is essential for ensuring reproducible performance.
Batch Consistency: TRUNNANO implements strict quality control protocols throughout the production process to ensure batch-to-batch consistency and reliability.
Storage and Shelf Life
Zinc nitride powder is hygroscopic and sensitive to moisture, which can lead to gradual decomposition and degradation of performance properties over time.
Storage Conditions: For optimal storage, the powder should be kept in a dry, inert atmosphere such as argon or nitrogen, in airtight containers with desiccants. Exposure to ambient air should be minimized, especially in humid environments.
Shelf Life: Under proper storage conditions (cool, dry, and moisture-free), Zn₃N₂ powder can maintain its quality for extended periods. However, prolonged storage may result in surface oxidation or formation of impurities, so it is recommended to conduct quality checks before use.
Application Considerations: For thin-film deposition applications, freshly prepared films generally exhibit the best performance. Any significant delay between film preparation and device fabrication should be avoided.
Supplier Support: TRUNNANO provides storage recommendations and material test reports with each shipment to assist customers in maintaining product quality.
Zn₃N₂ Safety, QC and Storage
