What is GaN powder?
GaN is a very stable compound and a hard high melting point material, with a melting point of about 1700℃. GaN has a high ionization degree, the highest among III-V compounds (0.5 or 0.43). Under atmospheric pressure, GaN crystal is generally a hexagonal wurtzite structure. It has four atoms in a cell, and the volume of atoms is about half that of GaAs. Because of its high hardness, it is also a good coating protection material. It has a band gap of 3.4 eV and is crack resistant in its pure form.
Gallium nitride (GaN) is a semiconductor with a large bandgap, which belongs to the wide bandgap semiconductors. Gallium nitride is an excellent material for microwave power transistors and a new semiconductor material for developing microelectronic and optoelectronic devices. It has a wide direct band gap, strong atomic bonds, high thermal conductivity, good chemical stability (hardly corroded by any acid), strong resistance to irradiation, high temperature, and high voltage.
The applications of GaN carbide
Gallium nitride is used in new electronic devices and photoelectric devices. Gallium nitride (GaN), a chemical formula, is a compound of nitrogen and gallium. It is a semiconductor with a direct energy gap and has been commonly used in light-emitting diodes since 1990. This compound is similar to wurtzite in structure and has high hardness. Gallium nitride has a wide energy gap of 3 or 4 electron volts and can be used in high-power and high-speed photoelectric elements. For example, gallium nitride can be used in violet laser diodes, producing violet lasers without using nonlinear semiconductor-pumped solid-state lasers.GaN is used in the field of fast charging of mobile phones. Gallium nitride charger using Gan technology has the characteristics of large power, small size and high efficiency, which are the key to the breakthrough of super-fast charging technology.
Properties and stability of gallium nitride
GaN begins to decompose at 1050℃: 2GaN(s)=2Ga(g)+N2(g). X-ray diffraction has pointed out that GaN crystal belongs to the hexagonal system of the wurtzite lattice type. In nitrogen or helium, when the temperature is 1000℃, GaN will evaporate slowly, which proves that GaN is stable at a higher temperature. At 1130℃, its vapor pressure is lower than that calculated from enthalpy and entropy, which is due to the existence of polymer molecule (GaN) X. GaN is not decomposed by cold or hot water, dilute or concentrated hydrochloric acid, nitric acid, and sulfuric acid, or cold 40%HF. It is also stable in cold concentrated alkali but can dissolve in alkali when heated.
The price of GaN powder
The market price of GaN powder is affected by various factors. Currently, its market price is in the process of dynamic change. If you need it, please contact us at any time.
GaN powder supplier
TRUNNANO (aka. Luoyang Tongrun Nano Technology Co., Ltd.) is a reputable global chemical material supplier and manufacturer with 12 years of experience providing high-quality chemical materials and manufacturing processes. Currently, our company has successfully developed a series of powder materials. OEM service is available. If you are looking for GaN powder, please contact us or click on the needed products to send us an inquiry.
