What is gallium nitride? TheGAN is called the third-generation semiconductor material after SIC and Diamond and other semiconductor materials, such as the first generation of GE and SI conductive materials, as well as the second-generation GaaS and INP INP composite semiconductor materials. It has a wide direct gap, powerful atomic key, high heating rate, good chemical stability (almost no acid corrosion), and strong radiation resistance. It has many prospects in applying optoelectronics, high-temperature, high-power, and high-frequency microwave equipment.
Material growth of gallium nitride The growth of GaN requires a certain growth temperature and NH3 partial pressure. The commonly used methods include conventional MOCVD (including APMOCVD and LPMOCVD), plasma-enhanced MOCVD (PE-MOCVD), and electron cyclotron resonance-assisted MBE. The required temperature and NH3 partial pressure decrease in turn. The equipment used in this work is AP-MOCVD. The reactor is horizontal and has been specially designed and modified. Domestic high-purity TMGa and NH3 are used as source program materials, DeZn is used as a P-type doping source, (0001) sapphire and (111) silicon are used as substrates, high-frequency induction heating is used, low-resistance silicon is used as a heating element, and high-purity H2 is used as a carrier gas of MO source. Use high-purity N2 as the regulation of the growth zone. The quality of GaN was characterized by HALL measurement, double crystal diffraction, and room temperature PL spectrum. To grow a perfect GaN, there are two key problems. One is how to avoid the strong parasitic reaction of NH3 and TMGa so that the two reactants can be completely deposited on sapphire and Si substrates, and the other is how to grow perfect single crystals. To achieve the first goal, various airflow models and various types of reactors were designed, and finally, a unique reactor structure was found. GaN was grown on the substrate by adjusting the distance between the TMGa pipe and the substrate. At the same time, to ensure the quality and repeatability of GaN, the silicon base is used as the heating body to prevent the violent reaction of NH3 and graphite at high temperatures. For the second problem, the conventional two-step growth method is adopted. The sapphire material treated at high temperature will grow a GaN buffer layer of about 250A0 at 550 ℃ and then grow a perfect GaN single crystal material at 1050 ℃. For the growth of a GaN single crystal on a Si substrate, the AlN buffer layer is first grown at 1150 ℃, and then the GaN crystal is grown.
Price of gallium nitride Gallium nitride particle size and purity will affect the product's price, and the purchase volume can also affect the cost of gallium nitride. A large amount of large amount will be lower. The price of gallium nitride can be found on our company's official website.
Gallium nitride supplier Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) Luoyang City, Henan Province, China, is a reliable and high-quality global chemical material supplier and manufacturer. It has more than 12 years of experience providing ultra-high quality chemicals and nanotechnology materials, including gallium nitride, nitride powder, graphite powder, sulfide powder, and 3D printing powder. If you are looking for high-quality and cost-effective gallium nitride, you are welcome to contact us or inquire at any time.
