What is gallium nitride? The research and application ofGaN materials are the frontier and hotspot of the world's semiconductor research. It is a new semiconductor material for developing microelectronic devices and optoelectronic devices. Together with semiconductor materials such as SIC and diamond, it is known as the third generation of semiconductor materials after the first generation of Ge and Si semiconductor materials and the second generation of GaAs and InP compound semiconductor materials. It has a wide direct band gap, strong atomic bonds, high thermal conductivity, good chemical stability (almost no acid corrosion), and strong radiation resistance. It has broad prospects in applying optoelectronics, high-temperature, high-power, and high-frequency microwave devices.
Electrical properties of gallium nitride The electrical characteristics of GaN are the main factors affecting the device. The unintentionally doped GaN is n-type in all cases, and the best sample has an electron concentration of about 4 × 1016/cm3。 Generally, the prepared P-type samples are highly compensated. Many research groups have been engaged in research work in this field, among which Nakamura reported that the maximum mobility data of GaN at room temperature and liquid nitrogen temperature are μ N=600cm2/v · s and μ N=1500cm2/v · s, corresponding carrier concentration is n=4 × 1016/cm3 and n=8 × 1015/cm3。 The electron concentration value of the GaN layer deposited by MOCVD reported in recent years is 4 × 1016/cm3、<1016/cm3； The result of plasma-activated MBE is 8 × 103/cm3、<1017/cm3。 Undoped carrier concentration can be controlled in the range of 1014~1020/cm3. In addition, the doping concentration can be controlled in the range of 1011~1020/cm3 through the P-type doping process and low-energy electron beam irradiation or thermal annealing of Mg.
GaN photoelectric device In 1993, Nichia first developed a high-brightness GaInN/AlGaN heterojunction blue LED with luminous brightness exceeding that of LCD, using Zn-doped GaInN as the active layer, with an external quantum efficiency of 2.7% and the peak wavelength of 450nm, and realized the commercialization of the product. In 1995, the company launched a commercial GaN green LED with an optical output power of 2.0 mW and brightness of 6 cd, with a peak wavelength of 525 nm and a half-peak width of 40 nm. Recently, the company used its blue LED and phosphorescent technology to launch a white solid light emitting device with a color temperature of 6500K and an efficiency of 7.5 lumens/W. In addition to Nichia, HP, Cree, and other companies have launched their high-brightness blue LED products. The market of high-brightness LED is expected to jump from $386 million in 1998 to $1 billion in 2003. The applications of high-brightness LED mainly include car lighting, traffic signals, outdoor road signs, flat gold display, high-density DVD storage, blue-green light to submarine communication, etc.
Price of gallium nitride Gallium nitride particle size and purity will affect the product's price, and the purchase volume can also affect the cost of gallium nitride. A large amount of large amount will be lower. The price of gallium nitride can be found on our company's official website.
Gallium nitride supplier Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) Luoyang City, Henan Province, China, is a reliable and high-quality global chemical material supplier and manufacturer. It has more than 12 years of experience providing ultra-high quality chemicals and nanotechnology materials, including gallium nitride, nitride powder, graphite powder, sulfide powder, and 3D printing powder. If you are looking for high-quality and cost-effective gallium nitride, you are welcome tocontact usor inquire at any time.
