Gallium nitride is an inorganic substance with the chemical formula GaN. It is a compound of nitrogen and gallium. It is a direct bandgap semiconductor and has been commonly used in light-emitting diodes since 1990. The structure of this compound is similar to wurtzite with high hardness. Gallium nitride has a wide energy gap of 3.4 electron volts, which can be used in high-power and high-speed optoelectronic components. For example, gallium nitride can be used in violet laser diodes. It can be used without nonlinear semiconductor pumped solid-state lasers ( Under the condition of Diode-pumped solid-state laser), a violet (405nm) laser is generated.
In 2014, Professor Yuki Akasaki of Nagoya University and Meijo University in Japan, Hiroshi Amano, professor of Nagoya University, and Shuji Nakamura, professor of University of California, Santa Barbara, won the Nobel Prize in Physics for the invention of the blue LED.
Applications of GaN
The GaN material series have low heat generation rate and high breakdown electric field. They are essential materials for the development of high-temperature high-power electronic devices and high-frequency microwave devices.
The GaN material series is an ideal material for short-wavelength light-emitting devices. The bandgap of GaN and its alloys covers the spectral range from red to ultraviolet.
The research and application of GaN materials is currently the frontier and hot spot of global semiconductor research. It is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices. Together with semiconductor materials such as SIC and diamond, it is known as the successor to the first generation of Ge and Si.
Semiconductor materials, second-generation GaAs, InP compound semiconductor materials and third-generation semiconductor materials. It has a wide direct bandgap, strong atomic bonds, high thermal conductivity, good chemical stability (hardly corroded by any acid) and strong radiation resistance. It is used in photo electronics, high temperature and high power devices and high The application of high-frequency microwave devices has broad prospects.
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