Gallium nitride is a compound of nitrogen and gallium, whose chemical formula is GaN. It has wide band gap, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. This material is a direct Bandgap semiconductor, commonly used in light-emitting diodes since 1990.This compound is similar to wurtzite in structure and has high hardness.Gallium nitride has a very wide energy gap up to 3.4 Electron Volts and can be used in high power, high speed optoelectronic devices such as gallium nitride laser diodes which can be used at uv light emitting Diode (5P-Pumped solid-state laser) at 405nm. Because the band gap width is greater than 2.2eV, gallium nitride (GaN), silicon carbide (SiC), aluminum nitride (ALN) and gallium oxide (Ga2O3) are collectively called wide band gap semiconductor materials, which are also known as the third generation semiconductor materials in China.
Based on the characteristics of large band gap width, high breakdown electric field, high thermal conductivity, high electron saturation drift velocity and small dielectric constant, the main application fields are semiconductor lighting, power electronics, rf microwave devices, lasers and detectors.With the decrease of cost, GaN is expected to replace diode, IGBT, MOSFET and other silicon-based power devices in the field of medium and low power.In terms of voltage, 0-300V is the dominant position of Si material, over 600V is the dominant position of SiC, and between 300V-600V is the dominant position of GaN material.According to Yole statistics, GaN devices can be applied to 68% of the power device market;In the field of application, the semiconductor lighting industry develops the most rapidly and has formed the scale of ten billion dollars.In the field of power electronics, the application of wide band gap semiconductors is just starting, the current market size is only a few hundred million dollars, but based on the chemical properties of gallium nitride, can make power supply smaller, more efficient, with higher power density;In the field of RADIO frequency and microwave, GaN's melting point is 1700℃, and its frequency and power can reach 25G and 1800W at present. It has great advantages in aerospace, microwave radar, satellite communication and 5G communication.In terms of laser, its base laser can cover a wide spectrum range. The base ultraviolet detector can be used in missile early warning, satellite secret communication, various environmental monitoring, chemical and biological detection and other fields, but it has not been industrialized yet.In terms of detectors, GAN-based uv detectors can be used in missile early warning, satellite secret communication, various environmental monitoring, chemical and biological detection and other fields, but they have not been industrialized yet.
As mentioned above, gallium nitridation in chargers can greatly improve charging efficiency and reduce volume, so some well-known mobile phone brands including OPPO and Xiaomi have started to make gallium nitridation plug.Based on the excellent chemical properties of gallium nitride, it will be widely used in the field of electronic products in the future.
TRUNNANO (aka. Luoyang Tongrun Nano Technology Co. Ltd.) is a trusted global chemical material supplier & manufacturer with over 12 years experience in providing super high quality chemicals and Nano materials. The gallium nitride produced by our company has high purity, fine particle size and impurity content. Lower, please contact us if necessary.
