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Building Blocks for Gallium Nitride LEDs and Gallium Nitride Transistors

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Update time : 2020-01-09 15:33:36
Each time you replace a tungsten bulb, consider the total energy consumed by the previous bulb over its life: more than 200 million joules (equivalent to the power generated by burning three tons of coal). But if we can add gallium nitride technology to the bulb manufacturing, it will save a lot of energy for the whole industry and even the entire country. Moreover, gallium nitride technology is of great significance for transistor research and development.

The importance of gallium nitride

With the development of semiconductor technology, the performance, efficiency, and miniaturization of semiconductor devices are becoming more and more critical. It becomes more and more vital to find a new generation of semiconductor materials besides silicon (SI).

In this case, gallium nitride came into being. Gallium nitride, with molecular formula GaN, is a compound of nitrogen and gallium. It is a direct bandgap semiconductor, which belongs to a very stable compound. Its hardness is good, and it is also a high melting point material. Its melting point is about 1700 ℃, and GaN has a high degree of ionization, which is the highest (0.5 or 0.43) among the III-V compounds. Under atmospheric pressure, GaN crystal is generally a hexagonal wurtzite structure.

Gallium nitride is a new semiconductor material for the development of microelectronic devices and optoelectronic devices. It has a vast prospect in the application of optoelectronics, lasers, high-temperature high-power devices, and high-frequency microwave devices. At present, the military and aerospace field is the largest market of GaN technology. According to statistics, the military and aerospace fields account for 40% of the total GaN device market, and the most extensive application market is radar and electronic warfare systems. Besides, gallium nitride has great civil value.

Gallium nitride led

lED has made significant progress since the 1960s because of its advantages of power saving, long life, anti-vibration, fast response, and low voltage operation.

The third-generation semiconductors with nitrides are playing an increasingly important role. Among them, the new generation of semiconductors represented by GaN has the advantages of the wide bandgap, high breakdown electric field, high electron saturation and drift speed, small dielectric constant, strong radiation resistance, and stable chemical properties. What's more, it can be used as a light source to change the proportion of group III elements with the doping of NIN and NAL, so that its light-emitting wavelength can cover the range from red light to ultraviolet light.

Lighting energy consumption accounts for about 20% of global energy consumption. A 5-watt bulb made of gallium nitride is as bright as a traditional 60-watt incandescent lamp. Therefore, gallium nitride helps to save a lot of energy for the lighting field.

Furthermore, the commercial success of InGaN / GaN blue light-emitting diodes (LEDs) today proves that group III-nitride devices provide low power consumption while maintaining high device performance.

Cost may be the main factor limiting the extensive use of white LEDs in homes and offices. GaN-based LEDs cost much more than incandescent bulbs or CFLs. But the costs are falling. If the white light diode is commercialized, it will bring a more significant revolution - the revolution of lighting technology.


Gallium nitride transistor

Transistors are mainly made of silicon and are used in high-voltage circuits to calculate and enhance electronic RF signals. However, silicon also has defects. When the temperature exceeds 200 ℃, the silicon-based equipment starts to break down. Gallium nitride transistors can cope with temperatures above 1000 degrees Celsius; they can deal with electric fields more than 50 times the strength of silicon, which allows scientists to use gallium nitride to make faster electronic circuits.

In the latest research, French and Swiss scientists have successfully planted gallium nitride on (100) - silicon wafers, creating new gallium nitride transistors and solving the problem of possible cracks at high temperatures. India has also developed the first electronic mode of gallium nitride power transistors. All of these show that GaN technology is more and more critical for future transistor transformation and upgrading. After solving the cost problem, it will bring a leap forward revolution for the development of the industry.

No matter LED or transistor and other electronic devices, gallium nitride technology still has many problems to be solved. However, it will play an increasingly important role in the future and set off a revolutionary tide!
TRUNNANO (Luoyang Trunnano Tech Co., Ltd ) is a professional gallium nitride manufacturer with over 12 years experience in chemical products research and development. If you are looking for high quality gallium nitride, please feel free to contact us and send an inquiry.

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