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Titanium Silicate, the Most Ideal Conductive Film Today

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Update time : 2020-07-10 10:30:34

What Is Titanium Silicide

With the reduction of device size, metal silicides as metal electrodes are widely used in source drain and gate of metal oxide semiconductor field effect transistors (M0SFET) to form gold-semi-contact with silicon, germanium or silicon-germanium semiconductors.The main role of metal silicides has been from providing reliable contact for simple diodes at the beginning, to forming low-resistance source leakage contact and low-block resistance gate electrode for MOSFET with self-aligned metal silicides formation process Salicide, which plays a very important role in the minification of CMOS device size and improvement of device performance.


Titanium silicide (TiSi2) has the advantages of low resistivity, high temperature resistance and good stability, and can be widely used in microelectronics, aviation high temperature resistant materials and coating materials, and has gradually become a research focus in related fields.


Preparation of Titanium Silicate

Titanium silicate has the advantages of simple forming process and high temperature stability. Generally, titanium silicate can be obtained by two methods. The first method is synthesis: titanium and silicon metal are put into an arc furnace and fused at 1100℃ in an atmosphere of argon.And the second: The titanium flakes are deposited in the titanium silicate process, and the intermediate stable phase C49 high resistance is obtained by the first annealing at a slightly lower temperature, and then the second annealing at a slightly higher temperature leads to the final low resistance phase C54(stable).

Applications of Titanium Silicate

As mentioned above, titanium silicate has excellent properties: high electrical conductivity, high selectivity, good thermal stability, good absorption to Si, good process adaptability and low interference to silicon connection parameters.Therefore, titanium silicate is widely used in gate, source/drain, interconnection and ohmic contact manufacturing of metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM) in integrated circuit devices.


TRUNNANO (aka. Luoyang Tongrun Nano Technology Co. Ltd.) is a trusted global chemical material supplier & manufacturer with over 12 years experience in providing super high quality chemicals and Nano materials. The titanium silicate produced by our company has high purity, fine particle size and impurity content. Lower, please contact us if necessary.

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