What is the full name of InP? The full name is indium phosphide. Indium phosphide is a chemical substance, dark gray crystals with pitch luster. It is made by heating and reacting metallic indium and red phosphorus in a quartz tube and used as a semiconductor material. Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (zinc blende) crystal structure, the same as GaAs and most III-V semiconductors.
Indium phosphide is a binary semiconductor material composed of phosphorus and indium. It has a face-centered cubic (galena) crystal structure similar to gallium arsenide and most of the third and fifth group semiconductors. InP is used for high-power and high-frequency electrons because the electron speed of InP is better than the more common semiconductor silicon and gallium arsenide.
Is InP ionic? Consider GaAs or InP, which are generally classified as ions. In other words, it can be considered that the solid electronic structure is mainly composed of cations and anions
What is the definition of semiconductors? A semiconductor is any kind of crystalline solid with an intermediate conductivity between a conductor and an insulator. Semiconductors are used in the manufacture of various electronic devices, including diodes, transistors and integrated circuits.
How is InP powder produced? The production process of indium phosphide involves the reaction of white phosphorus and indium iodide. White phosphorus is a waxy translucent solid that turns yellow when exposed to light, while indium iodide is an orange crystalline solid. Indium phosphide can be obtained by the following methods: Both elements are stored at 400°C. When the trialkylindium compound and phosphine are mixed by thermal synthesis, the purified elements are combined under high pressure and high temperature. In addition, in order to obtain the surface of indium phosphide nanocrystals, electrochemical etching was performed before observation with a scanning electron microscope.
Application of indium phosphide InP powder Since the electron speed is higher than that of ordinary silicon semiconductors and gallium arsenide, indium phosphide is used in high-power and high-frequency electronic circuits. Due to its direct bandgap, indium phosphide is suitable for optoelectronic engineering components, such as laser diodes. Indium phosphide is also used in the epitaxial substrate of indium gallium arsenide-based optoelectronic devices. INP is used as the basis for three main application areas, including optoelectronic components, high-speed electronic devices and photovoltaic devices. However, it must be noted that INP-based components also open up an area in the electromagnetic spectrum between infrared and microwave. Although this technical field called terahertz is not fully utilized, its range presents a mixture of electromagnetic waves with high frequency and high optical characteristics.
Storage conditions of InP powder Moist clusters affect the dispersion performance and use the effect of InP powder. Therefore, indium phosphide InP powder should be sealed in a vacuum package and stored in a cool and dry room. Indium phosphide should not be exposed to air. In addition, avoid using InP powder under pressure.
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