Bismuth telluride is a gray powder with the molecular formula Bi2Te3. Bismuth telluride is an indirect band gap semiconductor with a band gap at room temperature of 0.145eV, electron and hole mobility of 0.135 and 4.4×10-2m2/(V·s), respectively, and a thermoelectric quality coefficient of 1.6×10-3/K.
Bismuth telluride has a density of 7.8587g/cm3 and a melting point of 585°C. It is bound by covalent bonds and has a certain ionic bond composition. Bismuth telluride has the obvious characteristics of a topological insulator, allowing electrons to flow freely on its surface without losing any energy.
The preparation methods of bismuth telluride include Bridgman method, zone smelting method, and Czochralski method. Bismuth telluride is a semiconductor material, which has good electrical conductivity, but poor thermal conductivity.
What is the application of Bismuth Telluride?
Bismuth telluride-based thermoelectric semiconductors are high-performance thermoelectric conversion materials in the middle and low temperature areas. They are widely used in local refrigeration and precise temperature control in the fields of microelectronics, computers, and aerospace. They have good application prospects in industrial waste heat recovery and thermoelectric power generation.
Through alloying doping, phonon scattering can be enhanced to reduce the thermal conductivity of the lattice, and the carrier concentration can be optimized to improve the electrical performance, thereby improving the thermoelectric performance of the bismuth telluride-based material.
Although the danger of bismuth telluride is low, it can be fatal if ingested in large amounts. However, this material can allow electrons to move on its surface without energy consumption at room temperature, which will bring a leap in the operating speed of the chip, even it can greatly improve the operating speed and work efficiency of computer chips.
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