What is Gallium Nitride Powder? Gallium nitride is an inorganic substance with the chemical formula GaN, which is a compound of nitrogen and gallium. It is a direct bandgap semiconductor and has been commonly used in light-emitting diodes since 1990. This compound has a wurtzite-like structure and high hardness. The energy gap of gallium nitride is very wide, 3.4 electron volts, which can be used in high-power, high-speed optoelectronic components. For example, gallium nitride can be used in violet laser diodes, and can be used in non-linear semiconductor-pumped solid-state lasers ( Diode-pumped solid-state laser) produces violet (405nm) laser light. The main features of Gallium Nitride Powder GaN is a very stable compound and a hard high melting point material with a melting point of about 1700°C. GaN has a high degree of ionization, which is the highest (0.5 or 0.43) among the III-V compounds. At atmospheric pressure, GaN crystals generally have a hexagonal wurtzite structure. It has 4 atoms in one cell, and the atomic volume is about half that of GaAs. Because of its high hardness, it is also a good coating protection material. 1. Chemical properties At room temperature, GaN is insoluble in water, acids and bases, but dissolves very slowly in hot alkaline solutions. NaOH, H2SO4 and H3PO4 can rapidly corrode poor quality GaN and can be used for defect detection of these low quality GaN crystals. GaN exhibits unstable characteristics at high temperatures under HCL or H2 gas, and is most stable under N2 gas. 2. Electrical characteristics The electrical properties of GaN are the main factors affecting the device. Unintentionally doped GaN is n-type in all cases, and the electron concentration of the best sample is about 4×1016/cm3. In general, the prepared P-type samples are highly compensated. Many research groups have been engaged in research work in this area. Among them, Nakamura reported that the highest mobility data of GaN are μn=600cm2/v·s and μn=1500cm2/v·s at room temperature and liquid nitrogen temperature, respectively. The corresponding current carrying The subconcentrations are n=4×1016/cm3 and n=8×1015/cm3. The electron concentration values of MOCVD-deposited GaN layers reported in recent years are 4 × 1016/cm3, <1016/cm3; the results of plasma-activated MBE are 8 × 103/cm3, <1017/cm3. The undoped carrier concentration can be controlled in the range of 1014-1020/cm3. In addition, through the P-type doping process and Mg low-energy electron beam irradiation or thermal annealing, the doping concentration has been controlled in the range of 1011-1020/cm3.
The applications of Gallium Nitride Powder GaN material series has low heat generation rate and high breakdown electric field, and is an important material for the development of high-temperature and high-power electronic devices and high-frequency microwave devices. At present, with the progress of MBE technology in the application of GaN materials and breakthroughs in key thin film growth technologies, various GaN heterostructures have been successfully grown. New devices such as Metal Field Effect Transistor (MESFET), Heterojunction Field Effect Transistor (HFET), Modulation Doped Field Effect Transistor (MODFET) and so on have been fabricated with GaN material. The modulation-doped AlGaN/GaN structure has high electron mobility (2000cm2/v·s), high saturation velocity (1×107cm/s), and low dielectric constant, and is the preferred material for making microwave devices; GaN The wider band gap (3.4eV) and sapphire and other materials are used as the substrate, and the heat dissipation performance is good, which is conducive to the device working under high power conditions. The supplier of Gallium Nitride Powder Luoyang Trunnano Tech Co., Ltd (TRUNNANO) is a professional nitride powder supplier with over 12 years of experience in chemical products research and development. We accept payment via Credit Card, T/T, West Union, and Paypal. Trunnano will ship the goods to customers overseas through FedEx, DHL, by air, or by sea. If you are looking for high-quality boron carbide powder, please feel free to contact us and send an inquiry.
