Power diode
PIN diode: Most power diodes mainly rely on the unidirectional conduction principle of PN junction and have extremely low on-state resistance, which is called PIN diode. From an application perspective, PIN diodes can be divided into rectifier diodes and fast-recovery diodes.
Schottky diode: Schottky diode is a unipolar device that uses the metal-semiconductor junction formed by the contact between metal and semiconductor as a Schottky barrier to produce a rectifying effect. It is widely used in medium and high power fields.
Single bidirectional thyristor
SCR, commonly known as a thyristor, is a semi-controlled rectifier device with a small size, no heating filament, long life, high reliability, and low price. It is mostly used in motor drive control, high-voltage direct current transmission (HVDC), and dynamic reactive power compensation. , ultra-large current electrolysis, and other occasions. A semiconductor device capable of providing electrical power amplification and having three or more electrodes.
Insulated gate bipolar transistor
The insulated gate bipolar transistor IGBT is a semiconductor power device composed of a MOSFET and a bipolar transistor. Its control is an insulated gate field effect transistor, and its output is a bipolar power transistor. Therefore, it has the speed and driving capabilities of both. The advantages overcome the disadvantages of both. At present, the withstand voltage reaches 5kV or even higher, and the current reaches 1.2kA.
Semiconductor power device module
A discrete device power module is composed of two or more semiconductor power device chips connected according to a certain circuit and installed on a ceramic-based copper-clad board (DCB). It is sealed in an insulating shell with elastic silicone gel and other protective materials or packaged in plastic. , a module that implements the functions of semiconductor power devices. Mainly used in high-voltage and high-current applications, such as smart grids, high-speed rail/EMUs, etc.
Wide bandgap power semiconductor devices
SiC power semiconductor devices include SiC power diodes, SiC JFETs, SiC MOSFETs, SiC IGBTs, and SiC power modules.
GaN power semiconductor devices include GaNHEMT high electron mobility transistors based on GaN semiconductor materials, GaN diodes, etc.
The main process flow of semiconductor power devices includes processing chips on silicon wafers (the main processes are thin film manufacturing, exposure, and etching), chip packaging, and testing the technical performance indicators of the processed chips. The main production processes are epitaxial. , photolithography process, etching process, ion implantation process, diffusion process, etc.
Epitaxial process technology
For Si power semiconductor devices, the epitaxial process is based on different silicon sources (SiH2CL2, SiHCL3, SiCL4) and one or more layers of intrinsic (undoped), N-type (PH3-doped) or P-type (B2H6-doped) single crystal silicon, and the thickness and resistivity of the silicon layer, the uniformity of thickness and resistivity, and surface defects must be controlled within the allowable range.
For SiC power semiconductor devices, it is very difficult to grow single crystals with low defect density because the SiC substrate crystal growth needs to be carried out at a temperature of 2300°C in an H2 protective atmosphere, using SiH4 and CH4 or C3H8 as reaction gases. The growth rate is generally only a few microns per hour, and there is still the problem of crystal defects in the SiC substrate extending to the epitaxial layer. Therefore, the cost of SiC wafers, especially high-quality and large-area SiC wafers, is much higher than that of Si wafers.
Photolithography process technology
The photolithography process is a process technology that transfers the mask (photoresist) pattern to the photoresist on the surface of the substrate to form the pattern required for the product. The accuracy of the photolithography machine generally refers to the minimum size of the photolithography pattern obtained during photolithography. Size. The higher the resolution, the thinner the lines you can get, and the higher the integration level.
Etching process technology
Etching is a process that uses physical or chemical methods to remove unnecessary materials from the surface of silicon wafers selectively. The basic function of etching is to accurately copy the mask pattern to ensure the normal progress of various processes in the production line, including wet etching, dry etching and other advanced etching technologies such as plasma enhanced reactive ion etching, electron cyclotron resonance etching (ECR), inductively coupled plasma etching (ICP).
Ion implantation process technology
Ion implantation uses high-tech equipment to inject the doping elements required for the device into the silicon wafer.
Diffusion process technology
The main purpose of the semiconductor doping process is to control the type, concentration, depth and PN junction of impurities in a specific region of the semiconductor. Diffusion techniques are a simple and convenient way to achieve this.
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