Aluminum nitride powder, a covalent bond compound, is an atomic crystal, belongs to diamond-like nitride, hexagonal system, wurtzite type crystal structure, which is a white or gray-white powder. The chemical formula is AlN.
Known for its high thermal conductivity and electrical insulating properties, aluminum nitride is an excellent material for making semiconductors. It is also used as a heat sink in light-emitter lighting technology.
Aluminum nitride is an inorganic compound of aluminium and nitrogen. It belongs to the wurtzite crystal structure and has a band gap of 6 eV at room temperature. This makes it suitable for applications in deep ultraviolet optoelectronics. It is also used as a circuit carrier in semiconductors.
Aluminum nitride is a dense technical ceramic material that can be manufactured in thick and thin forms. It is manufactured through a carbothermic reduction process. However, this process can be expensive, so research is needed into a cheaper powder preparation process. Several sintering aids are also used to make the material dense enough to meet technical specifications.
Aluminum nitride can be used to make optical materials such as nanotubes, which are used for chemical sensors. It is also used as a substrate material for silicon processing. It is highly resistant to oxidation, corrosion, and molten metals. It is stable at high temperatures under an inert atmosphere.
Aluminum nitride is found in almost any metal. It is a white to grayish blue powder. It dissolves in water and mineral acids. However, it is unstable in hydrogen atmospheres. It is also highly flammable.
It is used in mobile phones to form the radio frequency filter. It is also used in medical imaging and robotics. Its piezoelectric properties are also used in thin-film bulk acoustic resonators.
Aluminum Nitride History:
AlN aluminum nitride was first synthesized in 1877. By the 1980s, AlN aluminum nitride was a ceramic insulator (70-210 W‧m−1‧K−1 for polycrystalline materials, and 275 W‧m−1‧K−1 for single crystals), making nitrogen Aluminium oxide has a high heat transferability so that aluminum nitride is widely used in microelectronics. Unlike beryllium oxide, AlN aluminum nitride is non-toxic. AlN aluminum nitride is treated with metal and can replace alumina and beryllium oxide for a large number of electronic instruments.
AlN aluminum nitride can be produced by the reduction of aluminum oxide and carbon or by direct nitriding of aluminum metal. AlN Aluminum nitride is a substance connected by covalent bonds. It has the hexagonal crystal structure and is the same shape as zinc sulfide and fiber zinc ore. Industrial grade material can only be produced by hot pressing and welding. The substance is quite stable in the high-temperature environment. In the air, when temperature is higher than 700℃, oxidation will appear on the surface of the substance. Under room temperature, 5-10 nm thick oxide films can still be detected on the surface of material. Up to 1370℃, oxide films still protect substances.
Aluminum Nitride Properties:
AlN aluminum nitride has good thermal conductivity and a small thermal expansion coefficient and is an excellent thermal shock resistant material. Strong resistance to molten metal corrosion is an ideal crucible material for melting pure iron, aluminum, or aluminum alloy. AlN aluminum nitride is also an electrical insulator with excellent dielectric properties and is promising as electrical component.
The aluminum nitride coating on surface of gallium arsenide can protect it from ion implantation during annealing. AlN aluminum nitride is also a catalyst for the conversion of hexagonal boron nitride to cubic boron nitride. Aluminum nitride reacts slowly with water at room temperature. It can be synthesized from aluminum powder at 800-1000℃ in ammonia or nitrogen atmosphere. The product is white to gray-blue powder.
The AlN aluminum nitride produced by Tongrun has high purity, super fine particle sizes, uniform distribution, large specific surface area, low bulk density, high surface activity, good dispersibility and injection molding properties, and can be used for composite materials. It has excellent compatibility with semiconductor silicon, good interface compatibility, and can improve mechanical property and thermal conductivity and dielectric property of composite materials.
Aluminum Nitride Uses:
High thermal conductive filler for thermal paste and thermal grease;
Highly thermally conductive fillers for thermally conductive adhesives, thermally conductive silicone wafers, and epoxy thermally conductive potting compounds;
High thermal conductivity filler for thermally conductive engineering plastics;
High thermal conductive filler for packaging materials, high-temperature lubricants, adhesives, heat-dissipating paints, and heat-dissipating inks;
Insulation and thermally conductive fillers for manufacturing highly thermally conductive integrated circuit substrates (MCPCB, FCCL);
Highly thermally conductive filler for thermal interface materials (TIM);
For crucible metal smelting, evaporation boat, ceramic tools, cutting tools, microwave dielectric materials;
Used for manufacturing high thermal conductivity aluminum nitride ceramic substrates and various ceramic products;
For conductive ceramic evaporation boat;
Used to synthesize high-quality LED phosphors.
AlN ceramic properties:
Aluminum nitride ceramic is a ceramic whose main crystal phase is AlN aluminum nitride. Its mechanical properties are good, the flexural strength is higher than Al2O3 and BeO ceramics, and it can be sintered at normal pressure. Aluminum nitride ceramics have excellent electrical properties (dielectric constant, dielectric loss, bulk resistivity, dielectric strength), and good characteristics of light transmission.
1. AlN aluminum nitride powder is with high purity, small particle size, and high activity. It is the primary raw material for manufacturing aluminum nitride ceramic substrates with high thermal conductivity.
2. Aluminum nitride ceramic substrate is with high thermal conductivity, high strength, low expansion coefficient, high-temperature resistance, high resistivity, chemical resistance, and small dielectric loss. It is an ideal large-scale integrated circuit heat sink substrate and packaging material.
3. AlN aluminum nitride has high hardness, surpassing traditional alumina, and it is a new type of wear-resistant ceramic material. However, due to its high cost, it can only be used in areas with severe wear.
4. Using AlN ceramics' heat resistance and melt erosion resistance and thermal shock resistance, Al vaporizers, GaAs crystal crucibles, magnetic fluid power generation devices, and high-temperature turbine corrosion-resistant components can be produced. Its optical property can be used as infrared windows. Aluminum nitride films can be made to high-frequency piezoelectric elements, ultra-large-scale integrated circuit substrates, and so on.
5. AlN aluminum nitride is heat-resistant and resistant to the erosion of molten metal. AlN is stable to acids but easily eroded in alkaline solutions. When exposed to humid air, the newly formed AlN surface will react to form a thin oxide film. Utilizing this characteristic, it can be used as crucible and firing mold materials for melting metals such as aluminum, copper, silver, and lead. AlN ceramics have better metallization properties and can be used in the electronics industry to replace toxic beryllium oxide ceramics.
For a long time, Al2O3 and BeO ceramics are the two primary substrate materials for high-power packaging. However, these two substrate materials have inherent disadvantages. Al2O3 has a low thermal conductivity and a thermal expansion coefficient that does not match the chip material. Although BeO has excellent comprehensive properties, it has a high production cost and is highly toxic.
Therefore, from the aspects of performance, cost, and environmental protection, neither of these two substrate materials can be used as the ideal material for the development of high-power LED devices in the future. Aluminum nitride ceramics have excellent properties such as high strength, high thermal conductivity, high resistivity, small density, low dielectric constant, non-toxicity, and a coefficient of thermal expansion compatible with Si. They will gradually replace traditional high-power LED substrate materials and become One of the most promising ceramic substrate materials in the future.
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