New Discovery of Semiconductor Chip Heat Dissipation, Hexagonal Boron Nitride "Seamless Growth" on the Surface of Materials
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Update time : 2019-06-25 14:43:15
Hexagonal boron nitride is known as white graphite and has a layered structure similar to graphite. It has good lubricity, electrical insulating thermal conductivity and chemical resistance, and has neutron absorption capacity. The chemical stability is inert to all molten metal chemistry, and the shaped article is easy to machine and has high moisture resistance.
With the continuous development of semiconductor chips, the computing speed is getting faster and faster, and the problem of chip heating becomes a bottleneck restricting the development of chip technology. Thermal management is very important for developing high-performance electronic chips. Recently, Wei Dayun, a researcher at the Department of Polymer Science and Polymer Molecular Engineering of Fudan University, made great progress in the field of interface modification of FET dielectric substrates after three years of efforts. This work is expected to provide a new technology for dielectric substrate modification to solve the problem of chip heat dissipation.
To solve the problem of chip heating, Wei Dacheng team developed a conformal hexagonal boron nitride (h-BN) modification technology (ie, quasi-balanced PECVD). According to Wei Dacheng, the heat dissipation of the chip is largely limited by various interfaces, and the interface between the semiconductor and the dielectric substrate near the conductive channel is particularly important.
Hexagonal boron nitride is an ideal dielectric substrate modifying material that improves the interface between semiconductor and dielectric substrates. Numerous studies have shown that hexagonal boron nitride modification can reduce the surface roughness and impurity impact on carrier transport and improve device carrier mobility. However, the potential application of hexagonal boron nitride in the field of interface heat dissipation is often overlooked.
"The carrier mobility is related to the heating problem of the device. The higher the mobility, the less heat is generated at the same voltage. The heat dissipation is related to how to release this heat." Wei Dacheng explained, "Ordinary hexagonal nitrogen Boron, we compare it to a piece of paper, a piece of paper covering the surface of the material will inevitably have gaps, the transfer process in the existing hexagonal boron nitride preparation method will produce more gaps, while introducing impurities, defects, bringing research Adverse effects. Conformal hexagonal boron nitride is completely bonded to the surface of the material, with no gaps in the middle, and no impurities are mixed in, which is more conducive to good results."
“In this technology developed by our team, the conformal hexagonal boron nitride grows directly on the surface of the material, not only completely fits, leaves no gaps, and does not need to be transferred.” According to Wei Dacheng, conformal hexagonal boron nitride modification After that, the mobility of the tungsten selenide field effect transistor device is significantly improved; the interface thermal resistance is reduced; the maximum power density of the device operation is increased by 2 to 4 times, which is higher than the power density of the existing computer CPU.
This technology not only provides a new idea for solving the problem of chip heat dissipation, but also has high universality. It can be applied to transistor devices based on tungsten selenide materials, and can be extended to other materials and more device applications. In addition, the PECVD technology used in this research is a manufacturing process commonly used in the chip manufacturing industry, which makes this conformal hexagonal boron nitride have great potential for large-scale production and application.
In the future, the research team will continue to develop field-effect transistor electrical materials, including conjugated organic molecules, macromolecules, low-dimensional nanomaterials, research on the design principles of field-effect transistor devices, and in the fields of optoelectronics, chemical sensing, and biosensing application, etc.
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