What is GaSe? MostGaSe materials used to fabricate 2D GaSe devices through mechanical exfoliation were bought from commercial vendors, making it difficult to fully understand the properties of the materials. There have been many attempts to grow GaSe crystals, but the growth of high-quality bulk GaSe crystals is still a challenge. The great difference in saturation vapor pressure of the components Se and Ga can cause non-stoichiometry of a melt-grown crystal composition. Another obstacle is the dendrite growth caused by the instability of the growth front. The X-ray rocking curve and IR-transmittance results reveal that crystalline quality still needs to be improved. In addition, high-quality crystals are also required to reduce scattering and improve phase matching for nonlinear applications. In this work, we report our efforts to grow high-quality GaSe crystals by the Bridgman method. Several methods exhibited great crystalline quality. 2D GaSe devices were fabricated based on high-quality crystal.
Characterization Methods of GaSe The phase and crystal structure of the as-grown GaSe crystals were identified by powder X-ray diffraction. The rocking curve was obtained from the (004) reflex of the cleaved GaSe face using an Empyrean X-ray diffraction machine (PANalytical, X’Pert Pro, Eindhoven, The Netherlands). The composition of GaSe was measured by an electro-probe micro analyzer (EPMA; JXA-8100, JEOL, Tokyo, Japan). The infrared transmittance from 500 to 4000 cm−1 was measured by a Nicolet Nexus Fourier Transform Infrared Spectrometer (Nexus 670, Nicolet, Waltham, MA, USA). The optical energy gap at room temperature was determined by a UV-3150 ultraviolet-visible/near-infrared spectrometer (Shimadzu, Kyoto, Japan). The photoluminescence spectrum was measured using an argon ion laser with a wavelength of 488 nm, and the luminescence signals were recorded with the spectrometer of TRIAX 550 (Jobin Yvon, Paris, France). The I–V characteristic curve was measured with an Agilent 4155C semiconductor parameter analyzer (Agilent, Santa Clara, CA, USA). The Hall measurement was carried out on Keithley HMS Model 7077 (Tektronix, Beaverton, OR, USA) to identify the carrier type and concentration and obtain the sample's mobility in Van der Pauw geometry.
Few-layered GaSe was obtained by mechanical exfoliation Few-layered GaSe was obtained by mechanical exfoliation by using scotch tape. Photodetectors were fabricated on p-doped Si substrates with a 300 nm SiO2. A Ti (5 nm)/Au (50 nm) electrode was deposited on clean SiO2/Si substrates by magnetron sputtering assisted with a mask. Few-layered GaSe was transferred onto the electrodes using poly (dimethyl siloxane) (PDMS). The devices were annealed under a high vacuum for two h at 200 °C to reduce contact resistance. Electrical measurements were made using an Agilent 4155C (Agilent, Santa Clara, CA, USA) combined with a probe station.
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