By Lzh | 07 February 2023 | 0 Comments
Why titanium disilicide can be used to prepare composite functional titanium silicide coated glass?
What is titanium disilicide?
Titanium silicide (TiSi2) has ideal characteristics: high conductivity, high selectivity, good thermal stability, good adsorption to Si, good process adaptability, and low interference to silicon connection parameters/Therefore; titanium silicide is widely used in metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM) gates, source/drain, In the manufacturing of interconnection and ohmic contact, metal silicides can be prepared by physical vapor deposition (sputtering, thermal evaporation, etc.) and chemical vapor deposition (CVD). The purpose of preparing titanium silicide is to obtain low-resistance TiSi2. TiSi2 has two polycrystalline phases: metastable C49 and stable thermodynamic C54. The C49 phase is an orthogonal bottom-centered crystal system; Each crystal cell is composed of 12 atoms; The cell size is a=0.362nm. b=1.376nm. c=0.360nm; resistivity ρ= 60~100 μ Ω · cm. The C54 phase is an orthorhombic face-centered crystal system. Each crystal cell is composed of 24 atoms; The cell size is a=0.826 nm, b=0.480 nm. c=0.853 nm; resistivity ρ= 12~20 μ Ω · cm. Because TiSi2 of the C54 phase has the same resistivity as the metal bulk, preparing titanium silicide is to obtain TiSi2 of the C54 phase.
Use of titanium disilicide
Preparation of composite functional titanium silicide-coated glass. Depositing a thin film layer on the common float glass substrate or depositing a layer of silicon between them. By preparing a composite film of titanium silicide and silicon or adding a small amount of active carbon or nitrogen into the film, titanium silicide composite silicon carbide or titanium carbide or titanium silicide composite silicon nitride or titanium nitride composite film, The mechanical strength and chemical corrosion resistance of the coated glass can be improved. The invention is a new type of coated glass that combines the functions of dimming and heat insulation and low radiation glass.
Preparation of titanium disilicide
Atmospheric pressure chemical vapor deposition (APCVD): APCVD has a high deposition rate and is operated at atmospheric pressure, which is easy to achieve online or offline continuous coating, with extensive coverage, economic production cost, and simple equipment. Ti2 thin films were prepared by APCVD using SiH4 and TiCI4 as precursors. Because the reaction is carried out at a high temperature, the C54 phase is directly formed: the particle size of the TiSi crystalline phase is about 50 nm at 690 ° C; The film resistivity is about 32 μ 2cm.
Price of titanium disilicide
Titanium disilicide particle size and purity will affect the product's price, and the purchase volume can also affect the cost of titanium disilicide. A large amount of large amount will be lower. The price of titanium disilicide can be found on our company's official website.
Titanium disilicide supplier
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) Luoyang City, Henan Province, China, is a reliable and high-quality global chemical material supplier and manufacturer. It has more than 12 years of experience providing ultra-high quality chemicals and nanotechnology materials, including titanium disilicide, nitride powder, graphite powder, sulfide powder, and 3D printing powder. If you are looking for high-quality and cost-effective titanium disilicide, you are welcome to contact us or inquire at any time.
Titanium silicide (TiSi2) has ideal characteristics: high conductivity, high selectivity, good thermal stability, good adsorption to Si, good process adaptability, and low interference to silicon connection parameters/Therefore; titanium silicide is widely used in metal oxide semiconductor (MOS), metal oxide semiconductor field effect transistor (MOSFET) and dynamic random access memory (DRAM) gates, source/drain, In the manufacturing of interconnection and ohmic contact, metal silicides can be prepared by physical vapor deposition (sputtering, thermal evaporation, etc.) and chemical vapor deposition (CVD). The purpose of preparing titanium silicide is to obtain low-resistance TiSi2. TiSi2 has two polycrystalline phases: metastable C49 and stable thermodynamic C54. The C49 phase is an orthogonal bottom-centered crystal system; Each crystal cell is composed of 12 atoms; The cell size is a=0.362nm. b=1.376nm. c=0.360nm; resistivity ρ= 60~100 μ Ω · cm. The C54 phase is an orthorhombic face-centered crystal system. Each crystal cell is composed of 24 atoms; The cell size is a=0.826 nm, b=0.480 nm. c=0.853 nm; resistivity ρ= 12~20 μ Ω · cm. Because TiSi2 of the C54 phase has the same resistivity as the metal bulk, preparing titanium silicide is to obtain TiSi2 of the C54 phase.
Preparation of composite functional titanium silicide-coated glass. Depositing a thin film layer on the common float glass substrate or depositing a layer of silicon between them. By preparing a composite film of titanium silicide and silicon or adding a small amount of active carbon or nitrogen into the film, titanium silicide composite silicon carbide or titanium carbide or titanium silicide composite silicon nitride or titanium nitride composite film, The mechanical strength and chemical corrosion resistance of the coated glass can be improved. The invention is a new type of coated glass that combines the functions of dimming and heat insulation and low radiation glass.
Preparation of titanium disilicide
Atmospheric pressure chemical vapor deposition (APCVD): APCVD has a high deposition rate and is operated at atmospheric pressure, which is easy to achieve online or offline continuous coating, with extensive coverage, economic production cost, and simple equipment. Ti2 thin films were prepared by APCVD using SiH4 and TiCI4 as precursors. Because the reaction is carried out at a high temperature, the C54 phase is directly formed: the particle size of the TiSi crystalline phase is about 50 nm at 690 ° C; The film resistivity is about 32 μ 2cm.
Price of titanium disilicide
Titanium disilicide particle size and purity will affect the product's price, and the purchase volume can also affect the cost of titanium disilicide. A large amount of large amount will be lower. The price of titanium disilicide can be found on our company's official website.
Titanium disilicide supplier
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) Luoyang City, Henan Province, China, is a reliable and high-quality global chemical material supplier and manufacturer. It has more than 12 years of experience providing ultra-high quality chemicals and nanotechnology materials, including titanium disilicide, nitride powder, graphite powder, sulfide powder, and 3D printing powder. If you are looking for high-quality and cost-effective titanium disilicide, you are welcome to contact us or inquire at any time.
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