By Lzh | 08 February 2023 | 0 Comments
Why titanium disilicide can be used to prepare a semiconductor device?
What is titanium disilicide?
Titanium silicide (TiSi2) has ideal characteristics: high conductivity, high selectivity, good thermal stability, good adsorption to Si, good process adaptability, and low interference to silicon connection parameters. Therefore, in integrated circuit devices, titanium silicide is widely used in the manufacturing of metal oxide semiconductors (MOS), metal oxide semiconductor field effect transistors (MOSFET) and dynamic random access memory (DRAM) gates, source and drain electrodes, interconnection and joust contacts. 
Preparation of titanium disilicide
LPCVD obtained C49TiSi2 thin film at about 600 ° C. The film was uniform and dense, but the deposition time was long about 2 hours; C54TiSi2 thin film can be obtained only after high-temperature annealing. Lee et al. showed that the deposition of TiSiz thin film by the LPCVD method is related to the substrate, and the larger the particles at the substrate, the larger the particles of TiSi2 thin film. Outhwell et al. 43 showed that the optimal SiH/TiCl4 molar ratio of TiSi2 thin film by LPCVD method is about 100, while the optimal SiH/TiCl4 molar ratio of APCVD is about 3
Use of titanium disilicide
A semiconductor element is prepared, which comprises a silicon substrate, on which a grid, a source, and a drain are formed, and an insulating layer is formed between the grid and the silicon substrate. The grid comprises a polysilicon layer on the insulating layer and a titanium silicide layer on the polysilicon layer. The titanium silicide layer is formed with a protective layer, a protective layer, a titanium silicide layer, and a polysilicon layer, and three layers of structure surround the insulating layer. The silicon nitride gap wall layer is arranged from the inside to the outside; the gap wall layer of the hydrophilic layer and the silicon oxide, the titanium silicide layer formed on the source electrode and the drain electrode, the inner dielectric layer formed on the silicon substrate, and the contact window opening formed in the inner dielectric layer. Adopting the above technical scheme, the utility model can make the wires in the grid electrode and the contact window insulated without short circuits.
Price of titanium disilicide
Titanium disilicide particle size and purity will affect the product's price, and the purchase volume can also affect the cost of titanium disilicide. A large amount of large amount will be lower. The price of titanium disilicide can be found on our company's official website.
Titanium disilicide supplier
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) Luoyang City, Henan Province, China, is a reliable and high-quality global chemical material supplier and manufacturer. It has more than 12 years of experience providing ultra-high quality chemicals and nanotechnology materials, including titanium disilicide, nitride powder, graphite powder, sulfide powder, and 3D printing powder. If you are looking for high-quality and cost-effective titanium disilicide, you are welcome to contact us or inquire any time.
Titanium silicide (TiSi2) has ideal characteristics: high conductivity, high selectivity, good thermal stability, good adsorption to Si, good process adaptability, and low interference to silicon connection parameters. Therefore, in integrated circuit devices, titanium silicide is widely used in the manufacturing of metal oxide semiconductors (MOS), metal oxide semiconductor field effect transistors (MOSFET) and dynamic random access memory (DRAM) gates, source and drain electrodes, interconnection and joust contacts.
LPCVD obtained C49TiSi2 thin film at about 600 ° C. The film was uniform and dense, but the deposition time was long about 2 hours; C54TiSi2 thin film can be obtained only after high-temperature annealing. Lee et al. showed that the deposition of TiSiz thin film by the LPCVD method is related to the substrate, and the larger the particles at the substrate, the larger the particles of TiSi2 thin film. Outhwell et al. 43 showed that the optimal SiH/TiCl4 molar ratio of TiSi2 thin film by LPCVD method is about 100, while the optimal SiH/TiCl4 molar ratio of APCVD is about 3
Use of titanium disilicide
A semiconductor element is prepared, which comprises a silicon substrate, on which a grid, a source, and a drain are formed, and an insulating layer is formed between the grid and the silicon substrate. The grid comprises a polysilicon layer on the insulating layer and a titanium silicide layer on the polysilicon layer. The titanium silicide layer is formed with a protective layer, a protective layer, a titanium silicide layer, and a polysilicon layer, and three layers of structure surround the insulating layer. The silicon nitride gap wall layer is arranged from the inside to the outside; the gap wall layer of the hydrophilic layer and the silicon oxide, the titanium silicide layer formed on the source electrode and the drain electrode, the inner dielectric layer formed on the silicon substrate, and the contact window opening formed in the inner dielectric layer. Adopting the above technical scheme, the utility model can make the wires in the grid electrode and the contact window insulated without short circuits.
Price of titanium disilicide
Titanium disilicide particle size and purity will affect the product's price, and the purchase volume can also affect the cost of titanium disilicide. A large amount of large amount will be lower. The price of titanium disilicide can be found on our company's official website.
Titanium disilicide supplier
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) Luoyang City, Henan Province, China, is a reliable and high-quality global chemical material supplier and manufacturer. It has more than 12 years of experience providing ultra-high quality chemicals and nanotechnology materials, including titanium disilicide, nitride powder, graphite powder, sulfide powder, and 3D printing powder. If you are looking for high-quality and cost-effective titanium disilicide, you are welcome to contact us or inquire any time.
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