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By TRUNNANO | 28 December 2020 | 0 Comments

Several Common Problems Of Spherical Aluminum Nitride

AlN is an atomic crystal that belongs to diamond-like nitride, stable up to 2200℃. The room temperature strength is high, and the strength decreases slowly with the increase of temperature. It has good thermal conductivity and a low thermal expansion coefficient, making it a good thermal shock material. It has a strong resistance to molten metal corrosion and is an ideal crucible material for melting and casting pure iron, aluminum, or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties, and it is also promising as an electrical component.
 
The aluminum nitride coating on the surface of gallium arsenide can protect it from ion implantation during annealing. Aluminum nitride is also a catalyst for the transformation from hexagonal boron nitride to cubic boron nitride. It reacts slowly with water at room temperature. It can be synthesized from aluminum powder at 800~1000℃ in an ammonia or nitrogen atmosphere. The product is white to grayish-blue powder. Or synthesized by the Al2O3-C-N2 system at 1600~1750℃, the product is an off-white powder. Or aluminum chloride and ammonia are made by the gas-phase reaction. The AlCl3-NH3 system can synthesize the coating by the vapor deposition method.
 
What is aluminum nitride used for?
 
Aluminum nitride (AlN) is an interesting material and one of the best materials if high thermal conductivity is required. Combined with its excellent electrical insulation properties, aluminum nitride is an ideal heat dissipation material for many electrical and electronic applications.
 
There are reports that most of the current research is developing a semiconductor (gallium nitride or alloy aluminum gallium nitride) based light-emitting diode that operates in ultraviolet light wavelength of light is 250 nanometers. In May 2006, it was reported that an inefficient diode could emit light waves with a wavelength of 210 nanometers [1]. Measured by vacuum ultraviolet reflectance, a single aluminum nitride crystal has an energy gap of 6.2 eV. In theory, the energy gap allows some waves with a wavelength of about 200 nanometers to pass. However, many difficulties need to be overcome when it is implemented commercially. Aluminum nitride is used in optoelectronic engineering, including a dielectric layer in optical storage interface and electronic substrate, as chip carrier with high thermal conductivity, and military use.
 
Due to aluminum nitride's piezoelectric effect characteristics, the epitaxial stretching of aluminum nitride crystals is also used in surface acoustic wave detectors. The detector will be placed on the silicon wafer. There are very few places where these thin films can be reliably manufactured.
 
The aluminum nitride ceramic has a high room temperature, high-temperature strength, small expansion coefficient, and good thermal conductivity. It can be used as a heat exchanger material for high-temperature structural parts.
 
Using aluminum nitride ceramics can withstand the corrosion properties of metals and alloys such as iron and aluminum. It can be used as a crucible and casting mold material for melting metals such as Al, Cu, Ag, Pb.
 
Is aluminum nitride poisonous?
 
Aluminum nitride toxicity
 
Exposure to AlN through the mouth, inhalation, or injection may cause bone and lung poisoning. Repeated contact can irritate eyes and skin.
 
Is aluminum nitride a metal?
 
Aluminum nitride (AlN) is a solid aluminum nitride. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a bandgap of ~6 eV at room temperature, which has potential applications in optoelectronics at deep ultraviolet frequencies.
 
What is the most likely formula for aluminum nitride?
 
Aluminum nitride with the chemical formula AlN is a nitride of aluminum. Aluminum nitride with the chemical formula AlN is a well-known nitride with exciting properties.
 
We have successfully fabricated an aluminum nitride light-emitting diode (LED) and observed ultraviolet light with a wavelength of 210 nm. This is the shortest wavelength ever observed from any semiconductor. This LED represents a major step towards replacing large, toxic, and low-efficiency gas light sources with compact, harmless, and high-efficiency semiconductor light sources. The application fields of these LEDs include environmental protection, nanotechnology, and information technology.
 
The shortest-wavelength color of light that is visible to the human eye is violet. Light with wavelengths shorter than 400 nm is called ultraviolet (UV) light:
That from 300 to 400 nm is called near-UV light.
That from 200 to 300 nm is called deep-UV light.
That shorter than 200 nm is called vacuum-UV light.
Since vacuum-UV is absorbed by air, deep-UV light is the shortest wavelength used in our living environment.
 
The deep-UV light sources available are gas light sources, such as mercury lamps or gas lasers. These contain toxic substances, which cause serious environmental problems. Moreover, gas lasers require frequent supplies of gas and are large and inefficient. Therefore, replacing these gas light sources with semiconductor light-emitting devices, such as light-emitting diodes (LEDs) and laser diodes (LDs), would save space and greatly improve reliability and efficiency. Also, semiconductor devices are durable and portable. These features will be advantageous for a variety of new applications.
 

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