By Trunnano | 10 May 2022 | 0 Comments
What is Titanium Silicide TiSi2 Powder used for?
Introduction to Titanium Silicide TiSi2 Powder
Titanium disilicide with the chemical formula TiSi2 is an inorganic compound of titanium and silicon. It is a dark gray square crystal, which can be made into powder and target material. It is a metallic silicide. Titanium and silicon metals are the raw materials. It has high electrical conductivity, high selectivity, good thermal stability, good Si adsorption, good process adaptability, and low interference to silicon connection parameters.
Applications of Titanium Silicide TiSi2 Powder
Titanium silicide is widely used in the gate, source/drain, interconnection, and ohmic contact manufacturing of metal oxide semiconductor (MOS), metal oxide semiconductor field-effect transistor (MOSFET), and dynamic random access memory (DRAM). Examples of its applications are as follows:
1. Used to make a kind of titanium silicide barrier layer. The devices using the preparation method of the titanium silicide barrier layer include non-silicide and silicide regions separated by isolation areas, and the surface of the device is covered with a sacrificial oxide layer. The invention includes: The lithography process is used to make the photoresist cover the non-silicide region and expose the silicide region. The sacrificial oxide layer in the silicide region is etched by the wet etching process. Silicide exposed silicon is amorphous and injected with As. Removal of the remaining photoresist in the non-silicide region; Sputtering titanium for the first alloying treatment; Wet etching removes the metal titanium that has not formed alloy and carries on the second alloying treatment. The invention deletes the Silicideblock oxide layer in the prior art and reduces the process cost. At the same time, the loss of isolation oxide film by etching is reduced and the process stability is improved.
2. Used to make an in situ synthesis titanium silicide (Ti5Si3) particle reinforced aluminum titanium carbide (Ti3AlC2) matrix composite. Ti3AlC2/Ti5Si3 composites with different volume ratios were prepared by adding a certain amount of silicon, in which the volume percentage of the enhanced phase of titanium silicate particles was 10-40%. The specific preparation method is as follows: Firstly, using titanium powder, aluminum powder, silicon powder, and graphite powder as raw materials, the molar ratio of Ti∶Al∶Si∶C is 3∶(1.1-x)∶x∶(1.8-2.0), where x is 0.1~0.5. The raw material powder is mixed by physical and mechanical methods for 8~24 hours and loaded into the graphite mold. The pressure is 10~20MPa and sintered in the hot-pressing furnace with a protective atmosphere. The heating rate is 10~50℃/ min, the sintering temperature is 1400~1600℃, the sintering time is 0.5~2 hours, and the sintering pressure is 20~40MPa. The invention can prepare aluminum-titanium carbide/silicide composite material with high purity and high strength at a lower temperature and in a shorter time.
3. Used to make composite functional titanium silicide coated glass. A thin film is deposited on an ordinary float glass substrate or a layer of the silicon film is deposited between them. The mechanical strength and chemical corrosion resistance of the coated glass can be improved by preparing the composite film of titanium silicide and silicon or adding a small amount of active carbon or nitrogen into the film to get the composite film of titanium silicide silicon carbide or titanium carbide or titanium silicide silicon nitride or titanium nitride. The invention relates to a new type of coated glass which combines the functions of dimming heat insulation and low radiation glass.
4. Used to make a semiconductor element, including a silicon substrate, the silicon substrate is formed on a gate, a source, and a drain, between the gate and the silicon substrate is formed a layer of the insulation layer, the gate is composed of a polysilicon layer on the insulating layer and a titanium silicide layer on the polysilicon layer, a silicide titanium layer is formed on a protective layer. There are three structural layers around the protective layer, the titanium silicide layer, the polysilicon layer, and the insulating layer, from inside to outside the silicon nitride gap wall layer, the parent layer and the silicon oxide gap wall layer, the source and drain formed on the titanium silicide layer, the silicon substrate is formed on the inner dielectric layer, the inner dielectric layer is formed in the contact window opening. By adopting the technical scheme, the wire in the gate and contact window can be completely insulated without a short circuit phenomenon.
Main Supplier of Titanium Silicide TiSi2 Powder
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality chemicals and Nanomaterials, including silicon powder, nitride powder, graphite powder, zinc sulfide, calcium nitride, 3D printing powder, etc.
If you are looking for high-quality titanium silicide TiSi2 powder, please feel free to contact us and send an inquiry. (sales3@nanotrun.com)
Titanium disilicide with the chemical formula TiSi2 is an inorganic compound of titanium and silicon. It is a dark gray square crystal, which can be made into powder and target material. It is a metallic silicide. Titanium and silicon metals are the raw materials. It has high electrical conductivity, high selectivity, good thermal stability, good Si adsorption, good process adaptability, and low interference to silicon connection parameters.
| Titanium Silicide TiSi2 Powder Properties | |
| Other Names | TiSi2 powder, titanium disilicide |
| CAS No. | 12039-83-7 |
| Compound Formula | TiSi2 |
| Molecular Weight | 104.04 |
| Appearance | black powder |
| Melting Point | 1470 °C |
| Boiling Point | N/A |
| Density | 4.02g/cm3 |
| Solubility in H2O | N/A |
| Exact Mass | 103.9018 |
Applications of Titanium Silicide TiSi2 Powder
Titanium silicide is widely used in the gate, source/drain, interconnection, and ohmic contact manufacturing of metal oxide semiconductor (MOS), metal oxide semiconductor field-effect transistor (MOSFET), and dynamic random access memory (DRAM). Examples of its applications are as follows:
1. Used to make a kind of titanium silicide barrier layer. The devices using the preparation method of the titanium silicide barrier layer include non-silicide and silicide regions separated by isolation areas, and the surface of the device is covered with a sacrificial oxide layer. The invention includes: The lithography process is used to make the photoresist cover the non-silicide region and expose the silicide region. The sacrificial oxide layer in the silicide region is etched by the wet etching process. Silicide exposed silicon is amorphous and injected with As. Removal of the remaining photoresist in the non-silicide region; Sputtering titanium for the first alloying treatment; Wet etching removes the metal titanium that has not formed alloy and carries on the second alloying treatment. The invention deletes the Silicideblock oxide layer in the prior art and reduces the process cost. At the same time, the loss of isolation oxide film by etching is reduced and the process stability is improved.
2. Used to make an in situ synthesis titanium silicide (Ti5Si3) particle reinforced aluminum titanium carbide (Ti3AlC2) matrix composite. Ti3AlC2/Ti5Si3 composites with different volume ratios were prepared by adding a certain amount of silicon, in which the volume percentage of the enhanced phase of titanium silicate particles was 10-40%. The specific preparation method is as follows: Firstly, using titanium powder, aluminum powder, silicon powder, and graphite powder as raw materials, the molar ratio of Ti∶Al∶Si∶C is 3∶(1.1-x)∶x∶(1.8-2.0), where x is 0.1~0.5. The raw material powder is mixed by physical and mechanical methods for 8~24 hours and loaded into the graphite mold. The pressure is 10~20MPa and sintered in the hot-pressing furnace with a protective atmosphere. The heating rate is 10~50℃/ min, the sintering temperature is 1400~1600℃, the sintering time is 0.5~2 hours, and the sintering pressure is 20~40MPa. The invention can prepare aluminum-titanium carbide/silicide composite material with high purity and high strength at a lower temperature and in a shorter time.
3. Used to make composite functional titanium silicide coated glass. A thin film is deposited on an ordinary float glass substrate or a layer of the silicon film is deposited between them. The mechanical strength and chemical corrosion resistance of the coated glass can be improved by preparing the composite film of titanium silicide and silicon or adding a small amount of active carbon or nitrogen into the film to get the composite film of titanium silicide silicon carbide or titanium carbide or titanium silicide silicon nitride or titanium nitride. The invention relates to a new type of coated glass which combines the functions of dimming heat insulation and low radiation glass.
4. Used to make a semiconductor element, including a silicon substrate, the silicon substrate is formed on a gate, a source, and a drain, between the gate and the silicon substrate is formed a layer of the insulation layer, the gate is composed of a polysilicon layer on the insulating layer and a titanium silicide layer on the polysilicon layer, a silicide titanium layer is formed on a protective layer. There are three structural layers around the protective layer, the titanium silicide layer, the polysilicon layer, and the insulating layer, from inside to outside the silicon nitride gap wall layer, the parent layer and the silicon oxide gap wall layer, the source and drain formed on the titanium silicide layer, the silicon substrate is formed on the inner dielectric layer, the inner dielectric layer is formed in the contact window opening. By adopting the technical scheme, the wire in the gate and contact window can be completely insulated without a short circuit phenomenon.
Main Supplier of Titanium Silicide TiSi2 Powder
Luoyang Tongrun Nano Technology Co. Ltd. (TRUNNANO) is a trusted global chemical material supplier & manufacturer with over 12-year-experience in providing super high-quality chemicals and Nanomaterials, including silicon powder, nitride powder, graphite powder, zinc sulfide, calcium nitride, 3D printing powder, etc.
If you are looking for high-quality titanium silicide TiSi2 powder, please feel free to contact us and send an inquiry. (sales3@nanotrun.com)
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